| PART |
Description |
Maker |
| M5-128/120-5YI M5-128/120-5YC M5-128/160-5YI M5-19 |
Fifth Generation MACH Architecture 第五代马赫架
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PBGA352
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
Air Cost Control
|
| SY100S838ZCTR SY100S838ZC SY100S838LZITR SY100S838 |
(÷1, ÷2/3) OR (÷2, ÷4/6) CLOCK GENERATION CHIP
(1 2/3) OR (2 4/6) CLOCK GENERATION CHIP
SMD-RELAY,2FORMC,5V,1A,140MW,S-S STB,10P
SOLDER WALL MT RECPT
CAP 0.018UF 500V 10% X7R SMD-1210 TR-7 PLATED-NI/SN
(±1, ±2/3) OR (±2, ±4/6) CLOCK GENERATION CHIP 100S SERIES, LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20
|
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
|
| MC100LVEL39 MC100LVEL39DW MC100EL39 MC100EL39DW ON |
±2/4,±4/6 Clock Generation Chip
From old datasheet system
2/4 /4/6 Clock Generation Chip
2/44/6 Clock Generation Chip
2/4,4/6 Clock Generation Chip
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PRESENTATION |
Presentation - AMDNext Generation Microprocessor Architecture
AMDs Next Generation Microprocessor Architecture
|
Advanced Micro Devices
|
| APT12GT60KR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 25A
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| SI3215-BT SI3215-GT SI3215-KT SI3215-X-FM SI3215-X |
PROSLICPROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, PDSO38
PROSLICPROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38
PROSLIC? PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION
PROSLIC垄莽 PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc.
Silicon Laboratories Inc.
|
| APT60GT60JRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 90A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Advanced Power Technology
|
| SI3233-X-GM SI3233-X-FM SI3201-X-FS SI3201-X-GS SI |
PROSLICPROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38
PROSLIC? PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc.
Silicon Laboratories Inc.
|
| STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 |
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| APT60GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 116A
|
ADPOW[Advanced Power Technology]
|
